IDT 0.35μm CMOS

Process Technology
Fabricated By IDT
Process http://cpudb.stanford.edu/technologies/50
Technology CMOS
Feature Size [μm] 0.35
Channel Length [μm] 0.35
Metal Layers 3
Metal Type aluminum
FO4 Delay [ps] 126.0
Year 1996
Nominal Vdd 3.30
Vth* 0.6

Fabricated processors


Designer Family Code Name Model μarch Released Cache Vdd Feature Size FO4 Clock TDP SPECInt 1992 SPECFp 1992 SPECInt 1995 SPECFp 1995 SPECInt 2000 SPECFp 2000 SPECInt 2006 SPECFp 2006
MIPS R5000 R5000 1996-01-01 512 3.30 0.35 126.0 150.0 3.3 4.4 details
MIPS R5000 R5000 1996-01-01 512 3.30 0.35 126.0 180.0 4.6 4.9 details
MIPS R5000 R5000 1996-01-01 64 3.30 0.35 126.0 200.0 5.7 details
MIPS R5000 R5000 1996-01-01 64 3.30 0.35 126.0 250.0 6.6 details