Fujitsu 0.09μm CMOS (CS-100)
Process Technology |
Fabricated By |
Fujitsu |
Process |
CS-100 |
Technology |
CMOS |
Feature Size [μm] |
0.09 |
Channel Length [μm] |
|
Metal Layers |
|
Metal Type |
|
FO4 Delay [ps] |
19.1
|
Year |
2005 |
Nominal Vdd |
|
Vth* |
0.4
|
Delay-Voltage Measurements
Gate |
Voltage |
Fanout |
Delay |
Delay (inv equivalent) |
Delay (inv equivalent) @ V |
inv |
1.0 |
1.0 |
7.0 |
7.0
|
|
nand2 |
1.0 |
1.0 |
11.4 |
6.0
|
|
Fabricated processors
Designer |
Family |
Code Name |
Model |
μarch |
Released |
Cache |
Vdd |
Feature Size |
FO4 |
Clock |
TDP |
SPECInt 1992 |
SPECFp 1992 |
SPECInt 1995 |
SPECFp 1995 |
SPECInt 2000 |
SPECFp 2000 |
SPECInt 2006 |
SPECFp 2006 |
|