Process Technology | |
---|---|
Fabricated By | Toshiba |
Process | http://cpudb.stanford.edu/technologies/106 |
Technology | CMOS |
Feature Size [μm] | 2.0 |
Channel Length [μm] | 2.0 |
Metal Layers | 2 |
Metal Type | |
FO4 Delay [ps] | 720.0 |
Year | 1986 |
Nominal Vdd | 5.00 |
Vth* | 1.0 |