Toshiba 0.3μm CMOS

Process Technology
Fabricated By Toshiba
Process http://cpudb.stanford.edu/technologies/105
Technology CMOS
Feature Size [μm] 0.3
Channel Length [μm] 0.3
Metal Layers
Metal Type
FO4 Delay [ps] 108.0
Year 1994
Nominal Vdd 3.30
Vth* 0.6

Fabricated processors


Designer Family Code Name Model μarch Released Cache Vdd Feature Size FO4 Clock TDP SPECInt 1992 SPECFp 1992 SPECInt 1995 SPECFp 1995 SPECInt 2000 SPECFp 2000 SPECInt 2006 SPECFp 2006
MIPS R4400 R4400MC 1994-05-01 32 3.30 0.3 108.0 200.0 132.6 3.7 details