Process Technology | |
---|---|
Fabricated By | Toshiba |
Process | http://cpudb.stanford.edu/technologies/105 |
Technology | CMOS |
Feature Size [μm] | 0.3 |
Channel Length [μm] | 0.3 |
Metal Layers | |
Metal Type | |
FO4 Delay [ps] | 108.0 |
Year | 1994 |
Nominal Vdd | 3.30 |
Vth* | 0.6 |