| Process Technology | |
|---|---|
| Fabricated By | TSMC |
| Process | http://cpudb.stanford.edu/technologies/110 |
| Technology | CMOS |
| Feature Size [μm] | 0.18 |
| Channel Length [μm] | 0.1 |
| Metal Layers | 6 |
| Metal Type | |
| FO4 Delay [ps] | 70.0 |
| Year | 2000 |
| Nominal Vdd | 2.20 |
| Vth* | 0.6 |
| Gate | Voltage | Fanout | Delay | Delay (inv equivalent) | Delay (inv equivalent) @ 2.20V |
|---|---|---|---|---|---|
| inv | 1.8 | 4.0 | 75.6 | 75.6 | 70.0 |